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PNA-1401LF - Silicon NPN Phototransistors

Download the PNA-1401LF datasheet PDF. This datasheet also covers the PNA1401LF variant, as both devices belong to the same silicon npn phototransistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ. ) Fast response : tr, tf = 3 µs (typ. ) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 2 1 Absolute Maximum Ratings (Ta = 25˚C) ø5.75 max. Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Oper.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PNA1401LF_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors PNA1401LF Unit : mm ø4.6±0.15 Glass window For optical control systems Features Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 2 1 Absolute Maximum Ratings (Ta = 25˚C) ø5.75 max.