PUB4702 fet equivalent, silicon n-channel power f-mos fet.
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q Incorporating built-in zener diodes
1.65±.
0.5±0.15 1.0±0.25 2.54±0.2 9!2.54=22.86±0.25
0.8±0.25 0.5±0.15
C1.5±0.5
s Absolute Maximum Ratings (TC = 25°C)
Param.
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