Datasheet4U Logo Datasheet4U.com

XN01110 Datasheet Silicon PNP epitaxial planer transistor

Manufacturer: Panasonic

📥 Download Datasheet

Datasheet Details

Part number XN01110
Manufacturer Panasonic
File Size 162.29 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet XN01110 Datasheet

Overview

www.DataSheet4U.com Composite Transistors XN1110 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package.

(Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1110 × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 0.1 to 0.3 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: AD Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance *1 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 VCE = –10V, IC = –5mA VCE = –10V, IC = –5mA IC = –10mA, IB = – 0.3mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VCB = –10V, IE = 1mA, f = 200MHz –30% 80 47 +30% –4.9 – 0.2 160 0.5 0.99 – 0.25 V V V MHz kΩ min –50 –50 – 0.1 – 0.5 – 0.01 460 typ max Unit V V µA µA mA Ratio between 2 elements +0.1 1.45±0.

Key Features

  • 1 DataSheet 4 U . com www. DataSheet4U. com Composite Transistors PT.
  • Ta 500 XN1110 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
  • VCE.
  • 120.
  • 100 VCE(sat).
  • IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE.
  • IC VCE=.
  • 10V.
  • 30.
  • 10.
  • 3.
  • 1 Ta=75˚C.
  • 0.3.
  • 0.1.
  • 0.03.
  • 25˚C 25˚C Forward current trans.

More Datasheets from Panasonic

Part Number Description
XN01112 Silicon PNP Transistor
XN01114 Silicon PNP epitaxial planer transistor
XN01119 Silicon PNP epitaxial planer transistor
XN01210 Silicon NPN Transistor
XN01211 Silicon NPN epitaxial planer transistor
XN01212 Silicon NPN Transistor
XN01215 Silicon NPN epitaxial planer transistor
XN0121E Silicon NPN Transistor
XN01401 Silicon PNP epitaxial planer transistor
XN01501 Silicon NPN Transistor