Datasheet Summary
.. posite Transistors
XN01112 (XN1112)
Silicon PNP epitaxial planar type
Unit: mm
For switching/digital circuits
- Features
- Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)
- Reduction of the mounting area and assembly cost by one half
2.90+0.20
- 0.05 1.9±0.1 (0.95) (0.95) 4 5
0.16+0.10
- 0.06
1.50+0.25
- 0.05
2.8+0.2
- 0.3
2 0.30+0.10
- 0.05 10˚
- Basic Part Number
- UNR2112 (UN2112) × 2
1.1+0.2
- 0.1
(0.65)
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO IC PT Tj...