Datasheet4U Logo Datasheet4U.com

XN01110 - Silicon PNP epitaxial planer transistor

Datasheet Summary

Features

  • 1 DataSheet 4 U . com www. DataSheet4U. com Composite Transistors PT.
  • Ta 500 XN1110 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
  • VCE.
  • 120.
  • 100 VCE(sat).
  • IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE.
  • IC VCE=.
  • 10V.
  • 30.
  • 10.
  • 3.
  • 1 Ta=75˚C.
  • 0.3.
  • 0.1.
  • 0.03.
  • 25˚C 25˚C Forward current trans.

📥 Download Datasheet

Datasheet preview – XN01110

Datasheet Details

Part number XN01110
Manufacturer Panasonic Semiconductor
File Size 162.29 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet XN01110 Datasheet
Additional preview pages of the XN01110 datasheet.

📁 Similar Datasheet

  • XN0NE92 - Silicon P-channel MOSFET (Panasonic)
Other Datasheets by Panasonic Semiconductor
  • XN01112 - Silicon PNP Transistor
  • XN01114 - Silicon PNP epitaxial planer transistor
  • XN01119 - Silicon PNP epitaxial planer transistor
  • XN01210 - Silicon NPN Transistor
  • XN01211 - Silicon NPN epitaxial planer transistor
  • XN01212 - Silicon NPN Transistor
  • XN01215 - Silicon NPN epitaxial planer transistor
  • XN0121E - Silicon NPN Transistor

Full PDF Text Transcription

▶ Click to expand full text
www.DataSheet4U.com Composite Transistors XN1110 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1110 × 2 elements 0.
Published: |