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PE4230 - SPDT High Power UltraCMOS RF Switch

Description

The PE4230 UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC through 3000 MHz.

This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input.

Features

  • Single 3-volt power supply.
  • Low insertion loss: 0.35 dB at 1000 MHz, 0.55 dB at 2000 MHz.
  • High isolation of 39 dB at 1000 MHz, 30 dB at 2000 MHz.
  • Typical input 1 dB compression point of +32 dBm.
  • Single-pin CMOS or TTL logic control.
  • Low cost Figure 2. Package Type 8-lead MSOP RF1 RF2 CMOS Control Driver CTRL Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 50 Ω) Parameter Operation Frequency Insertion Loss Isolation.

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Datasheet Details

Part number PE4230
Manufacturer Peregrine Semiconductor
File Size 284.14 KB
Description SPDT High Power UltraCMOS RF Switch
Datasheet download datasheet PE4230 Datasheet

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www.DataSheet4U.com Product Specification PE4230 Product Description The PE4230 UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC through 3000 MHz. This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input. Using a nominal +3-volt power supply, a typical input 1 dB compression point of +32 dBm can be achieved. The PE4230 also exhibits input-output isolation of better than 39 dB at 1000 MHz and is offered in a small 8-lead MSOP package. The PE4230 SPDT High Power UltraCMOS™ RF Switch is manufactured in Peregrine’s patented Ultra Thin Silicon (UTSi®) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1.
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