PE42510A - SPDT High Power UltraCMOS RF Switch

Peregrine Semiconductor

Datasheet Details

Part number	PE42510A
Manufacturer	Peregrine Semiconductor
File Size	818.71 KB
Description	SPDT High Power UltraCMOS RF Switch
Datasheet	PE42510A_PeregrineSemiconductor.pdf

The following specification defines an SPDT (single pole double throw) switch for use in cellular and other wireless applications.

HaRP™ technology enhancements to deliver high linearity and exceptional harmonics performance. HaRP™ technology is an innovative feature of the UltraCMOS™ process providing upgraded linearity performance. The PE42510A is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram RFC SPDT High Power UltraC.

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Published: Jan 18, 2010 |