PE42510A
Key Features
- Functional Diagram RFC SPDT High Power UltraCMOS™ RF Switch 30 - 2000 MHz Features
- No blocking capacitors required
- 50 Watt P1dB pression point
- 29 dB Isolation @800 MHz
- < 0.3 dB Insertion Loss at 800 MHz
- 2fo and 3fo < -84 dBc @ 42.5 dBm
- ESD rugged to 2.0 kV HBM
- Package Type 32-lead 5x5 mm QFN RF1 RF2 CMOS Control Driver and ESD CTRL .. Table
- Supply biased
- 0.3 -0.3 -65 4 VDD+ 0.3 150 85 200 40 45 27 2.2 2000 V V °C °C °C dBm dBm dBm W V TCASE Tj PIN PD VESD
