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Perkin Elmer Optoelectronics

C30616 Datasheet Preview

C30616 Datasheet

(C306xx) High Speed InGaAs PIN

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Lighting
Imaging
Telecom
InGaAs PIN Photodiodes
High-Speed InGaAs PIN
C30616, C30637, C30617, C30618
InGaAs PIN Photodiodes
Description
These high-speed InGaAs photo-
diodes are designed for use in
OEM fiber-optic communications
systems and high-speed receiver
applications including trunk
line, LAN, fiber-in-the-loop and
data communications. Ceramic
submount packages are available
for easy integration into high-
speed SONET, FDDI, datalink
receiver modules, or as back-
facet power monitors in laser
diode modules. Available in
hermetic TO-18 packages,
fibered packages, or in connec-
torized receptacle packages with
industry standard ST, FC or SC
connectors, these photodiodes
are designed to function with
either single or multimode
fibers. Receptacled and fibered
packages use a ball-lens TO-18
package to maximize coupling
efficiency. All devices are planar
passivated and feature proven
high reliability mounting and
contacting.
An MTTF of >109 hours
(approximately 105 years) at
50˚ C has been demonstrated to
d a t e f r o m standard production
samples.
Certified to meet ISO 9001,
PerkinElmer Optoelectronics is
committed to supplying the highest
quality products to our customers .
This series of receiver modules comply
to MIL-Q-9858A and AQAP-1 quality
standards. Process control is main-
tained through annual requalification
of production units and includes
extensive electrical, thermal and
mechanical stress, as well as an
extended life test. Additionally, every
wafer lot is individually qualified to
meet responsivity, capacitance and
dark current specifications. Reliability
is demonstrated with an extended high
temperature burn-in at 200˚ C for 168
hours (VR=10V), ensuring an MTTF >
107 hours at 50˚C (EA=0.7eV). Finally,
all production devices are screened
with a 16 hour, 200˚C burn-in (VR =
10V) and tested to meet responsivity,
spectral noise and dark current
specifications.
Applications
High-speed communications
SONET/ATM, FDDI
Datalinks and LANs
Features
50, 75, 100, 350 µm diameters
High responsivity at 1300 and
1550 nm
Low capacitance for high band-
widths (to 3.5 GHz)
Available in various packages
www.perkinelmer.com/opto




Perkin Elmer Optoelectronics

C30616 Datasheet Preview

C30616 Datasheet

(C306xx) High Speed InGaAs PIN

No Preview Available !

C30616, C30637, C30617, C30618
Specifications (at VR=Vop typical), 22˚ C
PARAMETER
C30616
C30637
Operating voltage
Breakdown voltage
Active diameter
Responsivity at 1300 nm Ceramic (Fig. 1)
Responsivity at 1550 nm Ceramic (Fig. 1)
Dark current
Spectral noise current (10 kHz, 1.0 Hz)
Capacitance at VR = VOP (typ) Ceramic (Fig. 1)
Rise-and-fall time (10% to 90%)
Bandwidth (-3 dB, RL = 50)
Available package types: See corresponding
figures.
Min Typ Max Min Typ Max
1
25
0.80
0.85
5 10
60
50
0.90
0.95
<1.0 2.0
<0.02 0.15
0.35 0.55
1 5 10
25 60
75
0.80 0.90
0.85 0.95
<1.0 2.0
<0.02 0.15
0.40 0.60
0.07 0.5
2.5 3.5
0.07 0.5
2.5 3.5
11
Units
V
V
µm
A/W
A/W
nA
pA/Hz
pF
ns
GHz
Maximum Ratings
Maximum forward current
Power dissipation
Storage temperature
Operating temperature
Min Typ Max Min Typ Max
10 10
100 100
-60 125 -60 125
-40 125 -40 125
Units
mA
mW
˚C
˚C
www.perkinelmer.com/opto
01-013:150202/2


Part Number C30616
Description (C306xx) High Speed InGaAs PIN
Maker Perkin Elmer Optoelectronics
Total Page 7 Pages
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