InGaAs Datasheet | Specifications & PDF Download

MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT Features: • 24.5 dBm of Power at 18 GHz • 15 dB typical Small Signal Gain at 18 GHz • 45% typical P

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NEC's 1310 nm InGaAsP MQW FP TOSA NX7314UA FOR LONG HAUL 155 Mb/s APPLICATION FEATURES • OPTICAL OUTPUT POWER: Pf = 1.0 mW • LOW THRESHOLD CURRENT Ith

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PRELIMINARY DATA SHEET NEC’s 1480 nm InGaAsP MQW FP PUMP LASER DIODE MODULE FOR EDFA APPLICATION (120 mW MIN) FEATURES • InGaAsP MQW-FP LASER DIODE •

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www.DataSheet4U.com NEC's 1310 nm InGaAsP MQW DFB LASER DIODE NX8300BE-CC IN COAXIAL PACKAGE NX8300CE-CC FOR 2.5 Gb/s APPLICATION FEATURES • INTERNAL

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www.DataSheet4U.com NEC's 1310 nm InGaAsP MQW DFB LASER DIODE NX8303BG-CC IN COAXIAL PACKAGE NX8303CG-CC FOR 622 Mb/s APPLICATION FEATURES • PEAK EMI

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www.DataSheet4U.com NEC's 1310 nm InGaAsP MQW DFB TOSA FOR LONG HAUL 622 Mb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Pf = 2.0 mW • LOW THRESHO

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PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response InGaAs P

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www.DataSheet4U.com DATA SHEET LASER DIODE NX7663JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX76

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www.DataSheet4U.com NEC's 1310 nm InGaAsP MQW DFB LASER DIODE NX8303BG-CC IN COAXIAL PACKAGE NX8303CG-CC FOR 622 Mb/s APPLICATION FEATURES • PEAK EMI

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PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l

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