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Mitsubishi Electric
MGF4918E - (MGF4910E Series) Super Low Noise InGaAs HEMT
www.DataSheet4U.com ww.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSHeet4U.com www..
Mitsubishi
MGF4919G - SUPER LOW NOISE InGaAs HEMT
MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mob.
HAMAMATSU
G12181 - InGaAs PIN photodiodes
InGaAs PIN photodiodes G12181 series Long wavelength type (cutoff wavelength: 1.85 to 1.9 µm) Features Cutoff wavelength: 1.85 to 1.9 µm Low cost Pho.
Mitsubishi
MGF4916G - SUPER LOW NOISE InGaAs HEMT
MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mob.
Mitsubishi Electric
MGF4953A - SUPER LOW NOISE InGaAs HEMT
www.DataSheet4U.com June/2004 MITSUBISHI SEMICONDUCTOR
Q-BAIHE
LSIPD-LD50 - Ultra low dark current Analog InGaAs PIN photodiode
50um Ultra low dark current Analog InGaAs PIN photodiode V4.1HIPD-002 20-10-01 Model: LSIPD-LD50 Features: High reliability, Ultra low dark curre.
Q-BAIHE
LSIPD-A75 - Analog InGaAs PIN photodiode
75um 2.5GHz Analog InGaAs PIN photodiode V4.1HIPD-003 20-10-01 Model: LSIPD-A75 Features: High reliability, low dark current 800-1700nm spectral.
Laser Components
FCI-INGAAS-500 - (FCI-INGAAS-55 - FCI-INGAAS-500) High Speed InGaAs Photodiodes
( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com .
CML
MwT-PH33F - Medium Power AlGaAs/InGaAs pHEMT
MwT-PH33F 26 GHz Medium Power AlGaAs/InGaAs pHEMT Features: • 24 dBm of Power at 18 GHz • 14 dB Small Signal Gain at 18 GHz • 45% typical PAE at 18 GH.
CML
MwT-PH7F - Medium Power AlGaAs/InGaAs pHEMT
MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT Features: • 24.5 dBm of Power at 18 GHz • 15 dB typical Small Signal Gain at 18 GHz • 45% typical P.
Q-BAIHE
LSIPD22-0.5 - InGaAs PIN Photodiode
800-2200nm 0.5mm InGaAs PIN Photodiode V4.1LWPD-010 21-10-01 Model: LSIPD22-0.5 Features: Low noise, High reliability 800-2200nm wide wavelengt.
Q-BAIHE
LSIPD-A40 - Analog InGaAs PIN photodiode
40um 6GHz Analog InGaAs PIN photodiode V4.1HIPD-001 20-10-01 Model: LSIPD-A40 Features: High reliability, low dark current 800-1700nm spectral ra.
Q-BAIHE
LSIPD-L1 - InGaAs PIN photodiode
1mm InGaAs PIN photodiode Model: LSIPD-L1 Features: High reliability, low dark current Top illumination Planar PIN PD Active diameter 1mm TO4.
Mitsubishi
ML925J19F - 2.5Gbps InGaAsP DFB LASER DIODE
Notice: Some parametric limits are subject to change MITSUBISHI LASER DIODES ML9xx19 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPE NAME ML925B19F / M.
Mitsubishi
ML920J19S - 2.5Gbps InGaAsP DFB LASER DIODE
Notice: Some parametric limits are subject to change MITSUBISHI LASER DIODES ML9xx19 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPE NAME ML925B19F / M.
Mitsubishi
ML925B19F - 2.5Gbps InGaAsP DFB LASER DIODE
Notice: Some parametric limits are subject to change MITSUBISHI LASER DIODES ML9xx19 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPE NAME ML925B19F / M.
Perkin Elmer Optoelectronics
C30617 - (C306xx) High Speed InGaAs PIN
D A T A S H E E T Lighting Imaging Telecom InGaAs PIN Photodiodes High-Speed InGaAs PIN C30616, C30637, C30617, C30618 InGaAs PIN Photodiodes De.
Perkin Elmer Optoelectronics
C30617 - (C306xx) High Speed InGaAs PIN Photodiodes
Description High-speed InGaAs photodiodes from PerkinElmer Optoelectronics are designed for use in OEM fiber optic communications systems and highspee.
