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NDL5522P

InGaAs AVALANCHE PHOTO DIODE

NDL5522P Features

* Internal Si pre-amplifier IC

* High sensitivity P =

* 33 dBm TYP. @ 2.5 Gb/s, NRZ

* Wide dynamic range Dr = 24 dB TYP. @ 2.5 Gb/s, NRZ

* Output impedance 50 Ω

* Transimpedance 300 Ω

* Detecting area size φ 50 µm

* GI-50/125

NDL5522P Datasheet (119.49 KB)

Preview of NDL5522P PDF

Datasheet Details

Part number:

NDL5522P

Manufacturer:

NEC

File Size:

119.49 KB

Description:

Ingaas avalanche photo diode.
DATA SHEET RECEIVER NDL5522P φ 50 µm InGaAs AVALANCHE PHOTO DIODE FOR 2.5 Gb/s BUTTERFLY MODULE WITH INTERNAL PRE-AMPLIFIER 8.9Discon1.0MIN.tinued .

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NDL5522P InGaAs AVALANCHE PHOTO DIODE NEC

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