* Internal Si pre-amplifier IC
* High sensitivity P =
* 33 dBm TYP. @ 2.5 Gb/s, NRZ
* Wide dynamic range Dr = 24 dB TYP. @ 2.5 Gb/s, NRZ
* Output impedance 50 Ω
* Transimpedance 300 Ω
* Detecting area size φ 50 µm
* GI-50/125
NDL5522P Datasheet (119.49 KB)
NDL5522P
NEC
119.49 KB
Ingaas avalanche photo diode.
DATA SHEET RECEIVER NDL5522P φ 50 µm InGaAs AVALANCHE PHOTO DIODE FOR 2.5 Gb/s BUTTERFLY MODULE WITH INTERNAL PRE-AMPLIFIER 8.9Discon1.0MIN.tinued .
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