PD8933 - InGaAs AVALANCHE PHOTO DIODES

Description

PD8XX3 series are InGaAs avalanche photodiode which has a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.

Features

φ35 µ m active diameter.
Low noise.
High speed response.
Small dark current.
High quantum efficiency.

Mitsubishi Electric Semiconductor

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Datasheet Details

Part number	PD8933
Manufacturer	Mitsubishi Electric Semiconductor
File Size	128.67 KB
Description	InGaAs AVALANCHE PHOTO DIODES
Datasheet	PD8933 Datasheet
Additional preview pages of the PD8933 datasheet.

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Full PDF Text Transcription

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MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8933 FEATURES • φ35 µ m active diameter • Low noise • High speed response • Small dark current • High quantum efficiency DESCRIPTION PD8XX3 series are InGaAs avalanche photodiode which has a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm. This photodiode features low noise, a high quantum efficiency and a high speed response is suitable for the light receiving element for long - distance optical communications.

Published: Mar 22, 2005 |