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PD84002 - RF power transistor

General Description

The PD84002 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 7 V in common source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • Broadband performances POUT = 2 W with 13 dB gain @ 870 MHz.
  • Plastic package.
  • ESD protection.
  • Supplied in tape and reel.
  • In compliance with the 2002/95/EC european directive.

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PD84002 RF power transistor The LdmoST plastic family Features ■ Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 2 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel ■ In compliance with the 2002/95/EC european directive Description The PD84002 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD84002’s superior gain and efficiency makes it an ideal solution for portable radio and UHF RFID reader. SOT-89 Figure 1. Pin connection Source Source Gate Drain Figure 2.