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PD84008-E Datasheet Rf Power Transistor

Manufacturer: STMicroelectronics

Overview: PD84008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary.

General Description

The PD84008-E is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broadband mercial and industrial applications.

It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V.
  • Plastic package.
  • ESD protection.
  • In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead).

PD84008-E Distributor