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PD84006-E Datasheet Rf Power Transistor

Manufacturer: STMicroelectronics

Overview: .. PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral.

General Description

The PD84006-E is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broadband mercial and industrial applications.

It operates at 7 V in mon source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF ’s superior linearity performance makes it an ideal solution for portable radio and UHF RFID reader.

Key Features

  • Excellent thermal stability Common source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead).

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