PD84006-E Datasheet | STMicroelectronics

.. RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features - - - - - - Excellent thermal stability mon source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plastic package ESD protection In pliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD84006-E is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 7 V in mon source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and reliability of ST’s...