PD84008L-E Datasheet | STMicroelectronics

RefTitle1 PD84008L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features - Excellent thermal stability - mon source configuration - POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V - Plastic package - ESD protection - In pliance with the 2002/95/EC european directive Description The PD84008L-E is a mon source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 7.5 V in mon source mode at frequencies of up to 1 GHz. PD84008L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in...