PD84006L-E Datasheet | STMicroelectronics

.. RF power transistor, LDmoST plastic family Features - - - - - - - Excellent thermal stability mon source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plastic package ESD protection Supplied in tape and reel In pliance with the 2002/95/EC european directive PowerFLATTM (5mm x 5mm) Description The PD84006L-E is a mon source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 7 V in mon source mode at frequencies up to 1 GHz. PD84006L-E’s superior gain and efficiency makes it an ideal solution for portable...