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PD84006L-E - RF power transistor

General Description

The PD84006L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 7 V in common source mode at frequencies up to 1 GHz.

Key Features

  • Excellent thermal stability Common source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plastic package ESD protection Supplied in tape and reel In compliance with the 2002/95/EC european directive PowerFLATTM (5mm x 5mm).

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www.DataSheet4U.com PD84006L-E RF power transistor, LDmoST plastic family Features ■ ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plastic package ESD protection Supplied in tape and reel In compliance with the 2002/95/EC european directive PowerFLATTM (5mm x 5mm) Description The PD84006L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 GHz. PD84006L-E’s superior gain and efficiency makes it an ideal solution for portable radio and UHF RFID reader. Figure 1. Pin connection Table 1.