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PD85025C - RF power transistor

General Description

The PD85025C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor.

It is designed for high gain, broadband commercial and industrial applications.

It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V.
  • BeO free package.
  • ESD protection.
  • In compliance with the 2002/95/EC european directive M243 Epoxy sealed.

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PD85025C RF power transistor - LdmoST family Preliminary Data Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V ■ BeO free package ■ ESD protection ■ In compliance with the 2002/95/EC european directive M243 Epoxy sealed Description The PD85025C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85025C’s superior linearity performance makes it an ideal solution for mobile application. Figure 1. Pin connection 1 3 2 1. Drain 2.