PD85025C
PD85025C is RF power transistor manufactured by STMicroelectronics.
RF power transistor
- Ldmo ST family
Preliminary Data
Features
- Excellent thermal stability
- mon source configuration
- POUT = 25 W with 16 d B gain @ 945 MHz /
13.6 V
- Be O free package
- ESD protection
- In pliance with the 2002/95/EC european directive
M243 Epoxy sealed
Description
The PD85025C is a mon source N-channel, enhancement-mode lateral Field Effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz. PD85025C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology.
PD85025C’s superior linearity performance makes it an ideal solution for mobile application.
Figure 1. Pin connection 1 3 2
1. Drain 2. Gate
3. Source
Table 1.
Device summary Order code PD85025C
Package M243
Packing Box
December 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/10
.st.
Contents
Contents
Electrical...
