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PD85035S-E

Manufacturer: STMicroelectronics

PD85035S-E datasheet by STMicroelectronics.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PD85035S-E datasheet preview

PD85035S-E Datasheet Details

Part number PD85035S-E
Datasheet PD85035S-E PD85035-E Datasheet (PDF)
File Size 339.15 KB
Manufacturer STMicroelectronics
Description RF POWER transistor
PD85035S-E page 2 PD85035S-E page 3

PD85035S-E Overview

The PD85035-E is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6V in mon source mode at frequencies of up to 1 GHz.

PD85035S-E Key Features

  • Excellent thermal stability mon source configuration POUT = 35W with 14.9dB gain @ 870MHz / 13.6V Plastic package ESD pr
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PD85035S-E Distributor

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