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PD85035S-E Datasheet Rf Power Transistor

Manufacturer: STMicroelectronics

Overview: PD85035-E PD85035S-E .. RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The PD85035-E is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broadband mercial and industrial applications.

It operates at 13.6V in mon source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability Common source configuration POUT = 35W with 14.9dB gain @ 870MHz / 13.6V Plastic package ESD protection In compliance with the 2002/93/EC european directive PowerSO-10RF (formed lead).

PD85035S-E Distributor