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PD85035S-E - RF POWER transistor

Download the PD85035S-E datasheet PDF. This datasheet also covers the PD85035-E variant, as both devices belong to the same rf power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The PD85035-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broadband commercial and industrial applications.

It operates at 13.6V in common source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability Common source configuration POUT = 35W with 14.9dB gain @ 870MHz / 13.6V Plastic package ESD protection In compliance with the 2002/93/EC european directive PowerSO-10RF (formed lead).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PD85035-E_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
PD85035-E RF POWER transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD85035-E PD85035S-E www.datasheet4u.com RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 35W with 14.9dB gain @ 870MHz / 13.6V Plastic package ESD protection In compliance with the 2002/93/EC european directive PowerSO-10RF (formed lead) Description The PD85035-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6V in common source mode at frequencies of up to 1 GHz.