PD85035S-E Datasheet | STMicroelectronics

PD85035-E PD85035S-E .. RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features - - - - - - Excellent thermal stability mon source configuration POUT = 35W with 14.9d B gain @ 870MHz / 13.6V Plastic package ESD protection In pliance with the 2002/93/EC european directive Power SO-10RF (formed lead) Description The PD85035-E is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6V in mon source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, Power SO-10RF. PD85035-E’s superior linearity performance makes it an ideal solution for car mobile radio. The Power SO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting remendations are available in .st./rf/ (look for application note AN1294) Power SO-10RF (straight lead) Figure 1. Pin connection Source Gate Drain Table 1. Device summary Part number PD85035-E PD85035S-E PD85035TR-E PD85035STR-E Package Power SO-10RF (formed lead) Power SO-10RF (straight lead) Power SO-10RF (formed lead) Power SO-10RF (straight lead) Rev 1 Packing Tube Tube Tape and reel Tape and reel 1/15 .st. 15 May 2007 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. Contents PD85035-E, PD85035S-E Contents 1 .. Electrical data - - - - -...