PD85050S Datasheet | STMicroelectronics

RF power transistor from the Ldmo ST family of N-channel enhancement-mode lateral MOSFETs - preliminary data Features - Operating frequencies from 1 MHz to 1000 MHz - POUT > 50W with 12d B gain @ 870 MHz / 13.6V - Unmatched device for wideband operation - Bi-directional ESD - Excellent Thermal stability - High linearity for TETRA, DMR, SSB modulations - Housed in Power SO-10RF plastic package - In pliance with the 2002/95/EC1 European directive Description The PD85050S is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies up to 1 GHz. The PD85050S boasts excellent gain, linearity and reliability thank to ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, the Power SO-10RF. The superior linearity performance of the PD85050S makes it an ideal solution for car mobile radios. The Power SO-10 plastic package is designed for high reliability, and is the first ST JEDEC-approved, high power SMD package from ST. It has been specially optimized for RF requirements and offers excellent RF performance and ease of assembly. Mounting remendations are provided in application note AN1294, available on .st.. Power SO-10RF (straight lead) Figure 1. Pin connection Source Gate Drain Table 1. Device summary Order codes Package Packing PD85050S PD85050STR Power SO-10RF (straight lead) Tube Tape and reel November 2012 Doc ID 023903 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/18 .st. Contents Contents...