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PD85050S Datasheet Rf Power Transistor

Manufacturer: STMicroelectronics

Overview: PD85050S RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet −preliminary.

General Description

The PD85050S is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broadband mercial and industrial applications.

It operates at 13.6 V in mon source mode at frequencies up to 1 GHz.

Key Features

  • Operating frequencies from 1 MHz to 1000 MHz.
  • POUT > 50W with 12dB gain @ 870 MHz / 13.6V.
  • Unmatched device for wideband operation.
  • Bi-directional ESD.
  • Excellent Thermal stability.
  • High linearity for TETRA, DMR, SSB modulations.
  • Housed in PowerSO-10RF plastic package.
  • In compliance with the 2002/95/EC1 European directive.

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PD85050S Distributor