PD85050S Description
The PD85050S is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies up to 1 GHz.
PD85050S Key Features
- Operating frequencies from 1 MHz to 1000 MHz
- POUT > 50W with 12dB gain @ 870 MHz / 13.6V
- Unmatched device for wideband operation
- Bi-directional ESD
- Excellent Thermal stability
- High linearity for TETRA, DMR, SSB modulations
- Housed in PowerSO-10RF plastic package
- In pliance with the 2002/95/EC1 European directive