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PD85050S

Manufacturer: STMicroelectronics

PD85050S datasheet by STMicroelectronics.

PD85050S datasheet preview

PD85050S Datasheet Details

Part number PD85050S
Datasheet PD85050S-STMicroelectronics.pdf
File Size 447.60 KB
Manufacturer STMicroelectronics
Description RF power transistor
PD85050S page 2 PD85050S page 3

PD85050S Overview

The PD85050S is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies up to 1 GHz.

PD85050S Key Features

  • Operating frequencies from 1 MHz to 1000 MHz
  • POUT > 50W with 12dB gain @ 870 MHz / 13.6V
  • Unmatched device for wideband operation
  • Bi-directional ESD
  • Excellent Thermal stability
  • High linearity for TETRA, DMR, SSB modulations
  • Housed in PowerSO-10RF plastic package
  • In pliance with the 2002/95/EC1 European directive
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