STMicroelectronics PD85050S
The PD85050S is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies up to 1 GHz.| Part No. | PD85050S |
|---|---|
| Datasheet | PD85050S Download |
| Manufacturer |  STMicroelectronics |
| Description | RF power transistor |
| Buy | Stock & Price |
FEATURES
● Operating frequencies from 1 MHz to 1000 MHz● POUT > 50W with 12dB gain @ 870 MHz / 13.6V
● Unmatched device for wideband operation
● Bi-directional ESD
● Excellent Thermal stability
● High linearity for TETRA, DMR, SSB modulations
● Housed in PowerSO-10RF plastic package
● In compliance with the 2002/95/EC1 European directive
DESCRIPTION
The PD85050S boasts excellent gain, linearity and reliability thank to ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity performance of the PD85050S makes it an ideal solution for car mobile radios. The PowerSO-10 plastic package is designed for high reliability, and is the first ST JEDEC-approved, high power SMD package from ST. It has been specially optimized for RF requirements and offers excellent RF performance and ease of assembly. Mounting recommendations are provided in application note AN1294, available on PowerSO-10RF (straight lead) Figure 1. Pin connection Source Gate Drain Table 1.
