PD85035C
PD85035C is RF power transistor manufactured by STMicroelectronics.
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RF power transistor
- Ldmo ST family
Preliminary Data
Features
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Excellent thermal stability mon source configuration POUT = 35 W with 14.5 d B gain @ 945 MHz / 13.6 V Be O-free ceramic package ESD protection In pliance with the 2002/95/EC european directive
M243 Epoxy sealed
Description
The PD85035C is a mon source N-channel, enhancement-mode lateral Field Effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz. PD85035C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85035C’s superior linearity performance makes it an ideal solution for car mobile radio. Figure 1. Pin connection
2 1. Drain 2. Gate 3. Source
Table 1.
Device summary
Order code PD85035C Package M243 Packing Box
November 2007
Rev 1
1/10
.st. 10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Contents
Contents
1 .. Electrical data
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1.1 1.2 Maximum...
