STMicroelectronics PD85035C
The PD85035C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.| Part No. | PD85035C |
|---|---|
| Datasheet | PD85035C Download |
| Manufacturer |  STMicroelectronics |
| Description | RF power transistor |
| Buy | Stock & Price |
FEATURES
● Excellent thermal stability● Common source configuration
● POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V
● BeO-free ceramic package
● ESD protection
● In compliance with the 2002/95/EC european directive
DESCRIPTION
PD85035C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85035C’s superior linearity performance makes it an ideal solution for car mobile radio. M243 Epoxy sealed Figure 1. Pin connection 1 3 2 1. Drain 2. Gate 3. Source Table 1. Device summary Part number PD85035C July 2009 Package M243 Doc ID14138 Rev 2 Packaging Box 1/11 11 Contents Contents PD85035C 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
