STMicroelectronics PD85015-E
The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.| Part No. | PD85015-E |
|---|---|
| Datasheet | PD85015-E Download |
| Manufacturer |  STMicroelectronics |
| Description | RF power transistor |
| Buy | Stock & Price |
FEATURES
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● Excellent thermal stability Common source configuration POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC European directive PowerSO-10RF (formed lead)
DESCRIPTION
The PD85015-E boasts excellent gain, linearity and reliability thanks to ST's latest LDMOS technology mounted on the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity of the device makes it an ideal solution for car radios. The PowerSO-10 plastic package, designed for high reliability, is the first JEDEC approved, high power SMD package from ST. It is optimized for RF requirements, and offers excellent RF performance and ease of assembly. PowerSO-10RF (straight lead) Figure 1. Pin connection Source Gate Drain Table 1. Device summary Order codes PD85015-E PD85015S-E PD85015TR-E PD85015STR-E Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Packaging Tube Tube Tape and reel Tape and reel May 2012 This is information on a product in full production.
