PD85015-E
PD85015-E is RF power transistor manufactured by STMicroelectronics.
RF power transistor, Ldmo ST plastic family N-channel enhancement-mode lateral MOSFETs
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Features
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Excellent thermal stability mon source configuration POUT = 15 W with 16 d B gain @ 870 MHz / 13.6 V Plastic package ESD protection In pliance with the 2002/95/EC European directive
Power SO-10RF (formed lead)
Description
The PD85015-E is a mon source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz. The PD85015-E boasts excellent gain, linearity and reliability thanks to ST's latest LDMOS technology mounted on the first true SMD plastic RF power package, the Power SO-10RF. The superior linearity of the device makes it an ideal solution for car radios. The Power SO-10 plastic package, designed for high reliability, is the first JEDEC approved, high power SMD package from ST. It is optimized for RF requirements, and offers excellent RF performance and ease of assembly.
Power SO-10RF (straight lead)
Figure 1.
Pin connection Source
Gate
Drain
Table 1.
Device summary
Order codes PD85015-E PD85015S-E PD85015TR-E PD85015STR-E Package Power SO-10RF (formed lead) Power SO-10RF (straight lead) Power SO-10RF (formed lead) Power SO-10RF (straight lead) Packaging Tube Tube Tape and reel Tape and reel
May 2012
This is information on a product in full production.
Doc ID 14466 Rev 4
1/14
.st. 14
Free Datasheet http://.datasheet-pdf./
Contents
Contents
1 Electrical data
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