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PD85015-E - RF power transistor

General Description

The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor.

It is designed for high gain, broadband, commercial and industrial applications.

It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability Common source configuration POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC European directive PowerSO-10RF (formed lead).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC European directive PowerSO-10RF (formed lead) Description The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.