PD85035-E
PD85035-E is RF POWER transistor manufactured by STMicroelectronics.
RF power transistor, Ldmo ST plastic family N-channel enhancement-mode lateral MOSFETs
Features
- Excellent thermal stability
- mon source configuration
- POUT = 35 W with 14.9 d B gain @ 870 MHz /
13.6 V
- Plastic package
- ESD protection
- In pliance with the 2002/95/EC1 European directive
Power SO-10RF (formed lead)
Description
The PD85035-E is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, Power SO-10RF. PD85035-E’s superior linearity performance makes it an ideal solution for car mobile radio.
The Power SO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting remendations are available in .st./rf/ (look for application note AN1294).
Power SO-10RF (straight lead)
Figure 1. Pin connection Source
Gate
Drain
Table 1. Device summary Order codes PD85035-E PD85035S-E PD85035TR-E
PD85035STR-E
Package Power SO-10RF (formed lead) Power SO-10RF (straight lead) Power SO-10RF (formed lead) Power SO-10RF (straight lead)
Packing Tube Tube
Tape and reel Tape and reel
May 2011
Doc ID 13597 Rev 3
1/16
.st.
Contents
Contents
Electrical data
-...
