Datasheet Details
| Part number | C30902E |
|---|---|
| Manufacturer | PerkinElmer Optoelectronics |
| File Size | 232.32 KB |
| Description | (C309xxx) Silicon Avalanche Photodiodes |
| Datasheet |
 C30902E Datasheet
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General Description
PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure.
This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths.
Key Features
- High Quantum Efficiency 77% Typical at 830 nm.
- C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability - Typically 15,000/second at +22°C 350/second at -25°C Count Rates to 2 x 106/second.
- Hermetically Sealed Package.
- Low Noise at Room Temperature C30902E, C30921E - 2.3 x 10-13 A/Hz1/2 C30902S, C30921S - 1.1 x 10-13 A/Hz1/2.
- High Responsivity - Internal Avalanche Gains in Excess o.