BF1211WR
Description
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges.
Key Features
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier
- Excellent low frequency noise performance
- Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
