BF1211WR Datasheet N-channel dual-gate MOS-FETs

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

Download the BF1211WR datasheet PDF. This datasheet also includes the BF1211 variant, as both parts are published together in a single manufacturer document.

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BF1211WR n-channel dual-gate mos-fets by Philips Semiconductors (now NXP Semiconductors) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BF1211-Philips.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BF1211WR
Manufacturer	Philips Semiconductors (now NXP Semiconductors)
File Size	102.02 KB
Description	N-channel dual-gate MOS-FETs
Download	BF1211WR Download (PDF)

General Description

Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Integrated diodes between gates and source protect against excessive input voltage surges.

The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product speciﬁcation 2003 Dec 16 Philips Semiconductors N-channel dual-gate MOS-FETs Product speciﬁcation BF1211; BF1211R;.

Key Features

Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier.
Excellent low frequency noise performance.
Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

More Datasheets from Philips Semiconductors (now NXP Semiconductors)

Part Number	Description
BF1211	N-channel dual-gate MOS-FETs
BF1211R	N-channel dual-gate MOS-FETs
BF1102R	Dual N-channel dual gate MOS-FETs