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BF1211R

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

BF1211R datasheet by Philips Semiconductors (now NXP Semiconductors).

This datasheet includes multiple variants, all published together in a single manufacturer document.

BF1211R datasheet preview

BF1211R Datasheet Details

Part number BF1211R
Datasheet BF1211R BF1211 Datasheet (PDF)
File Size 102.02 KB
Manufacturer Philips Semiconductors (now NXP Semiconductors)
Description N-channel dual-gate MOS-FETs
BF1211R page 2 BF1211R page 3

BF1211R Overview

Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

BF1211R Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio
  • Low noise gain controlled amplifier
  • Excellent low frequency noise performance
  • Partly internal self-biasing circuit to ensure good

BF1211R Applications

  • Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications
Philips Semiconductors (now NXP Semiconductors) logo - Manufacturer

More Datasheets from Philips Semiconductors (now NXP Semiconductors)

View all Philips Semiconductors (now NXP Semiconductors) datasheets

Part Number Description
BF1211 N-channel dual-gate MOS-FETs
BF1211WR N-channel dual-gate MOS-FETs
BF1102R Dual N-channel dual gate MOS-FETs

BF1211R Distributor

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