Part BF1102R
Description Dual N-channel dual gate MOS-FETs
Category MOSFET
Manufacturer Philips Semiconductors
Size 122.14 KB
Philips Semiconductors
BF1102R

Overview

PIN BF1102 BF1102R 1 gate 1 (1) gate 1 (1) 2 gate 2 (1 and 2) source (1 and 2) 3 drain (1) drain (1) 4 drain (2) drain (2) 5 source (1 and 2) gate 2 (1 and 2) 6 gate 1 (2) gate 1 (2) handbook, halfpage g2 (1, 2) DESCRIPTION The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage; integrated diodes between the gates and source protect against excessive input voltage surges.

  • Two low noise gain controlled amplifiers in a single package
  • Specially designed for 5 V applications
  • Superior cross-modulation performance during AGC
  • High forward transfer admittance
  • High forward transfer admittance to input capacitance ratio.