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BF1102R

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

BF1102R datasheet by Philips Semiconductors (now NXP Semiconductors).

BF1102R datasheet preview

BF1102R Datasheet Details

Part number BF1102R
Datasheet BF1102R-Philips.pdf
File Size 122.14 KB
Manufacturer Philips Semiconductors (now NXP Semiconductors)
Description Dual N-channel dual gate MOS-FETs
BF1102R page 2 BF1102R page 3

BF1102R Overview

Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage; integrated diodes between the gates and source protect against excessive input voltage surges.

BF1102R Key Features

  • Two low noise gain controlled amplifiers in a single package
  • Specially designed for 5 V

BF1102 from other manufacturers

View BF1102 datasheet index

Brand Logo Part Number Description Other Manufacturers
NXP Logo BF1102 Dual N-channel dual gate MOS-FET NXP
Philips Semiconductors (now NXP Semiconductors) logo - Manufacturer

More Datasheets from Philips Semiconductors (now NXP Semiconductors)

View all Philips Semiconductors (now NXP Semiconductors) datasheets

Part Number Description
BF1211 N-channel dual-gate MOS-FETs
BF1211R N-channel dual-gate MOS-FETs
BF1211WR N-channel dual-gate MOS-FETs

BF1102R Distributor

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