BF1102R
BF1102R is Dual N-channel dual gate MOS-FETs manufactured by Philips Semiconductors.
DISCRETE SEMICONDUCTORS
DATA SHEET book, halfpage
MBD128
BF1102; BF1102R Dual N-channel dual gate MOS-FETs
Product specification Supersedes data of 1999 Jul 01
2000 Apr 11
Philips Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
Features
- Two low noise gain controlled amplifiers in a single package
- Specially designed for 5 V applications
- Superior cross-modulation performance during AGC
- High forward transfer admittance
- High forward transfer admittance to input capacitance ratio.
APPLICATIONS
Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional munications equipment.
PINNING
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