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BF1102R Datasheet Dual N-channel Dual Gate Mos-fets

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

Overview: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 Philips Semiconductors Dual N-channel dual gate.

General Description

PIN BF1102 BF1102R 1 gate 1 (1) gate 1 (1) 2 gate 2 (1 and 2) source (1 and 2) 3 drain (1) drain (1) 4 drain (2) drain (2) 5 source (1 and 2) gate 2 (1 and 2) 6 gate 1 (2) gate 1 (2) handbook, halfpage g2 (1, 2) DESCRIPTION The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin.

Both devices have interconnected source and substrate;

an internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage;

Key Features

  • Two low noise gain controlled amplifiers in a single package.
  • Specially designed for 5 V.

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