BF1102 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specification 1999 Jul 08 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET Features - Two low noise gain controlled amplifiers in a single package - Specially designed for 5 V applications - Superior cross-modulation performance during AGC - High forward transfer admittance - High forward transfer admittance to input capacitance ratio. APPLICATIONS - Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional munications equipment. DESCRIPTION The BF1102 is a bination of two equal dual gate...