Part BF1102
Description Dual N-channel dual gate MOS-FET
Category MOSFET
Manufacturer NXP Semiconductors
Size 154.37 KB
NXP Semiconductors
BF1102

Overview

  • Two low noise gain controlled amplifiers in a single package
  • Specially designed for 5 V applications
  • Superior cross-modulation performance during AGC
  • High forward transfer admittance
  • High forward transfer admittance to input capacitance ratio. APPLICATIONS
  • Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION The BF1102 is a combination of two equal dual gate MOS-FETs with shared source and gate 2 leads. The source and substrate are interconnected. An internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. handbook, halfpage BF1102