NXP Semiconductors BF1100WR
The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The gate-source input must be protected against static discharge during transport or handling.| Part No. | BF1100WR |
|---|---|
| Datasheet | BF1100WR Download |
| Manufacturer |  NXP Semiconductors |
| Description | Dual-gate MOS-FET |
| Buy | Stock & Price |
FEATURES
● Specially designed for use at 9 to 12 V supply voltage● Short channel transistor with high forward transfer admittance to input capacitance ratio
● Low noise gain controlled amplifier up to 1 GHz
● Superior cross-modulation performance during AGC.
APPLICATIONS
● VHF and UHF applications such as television tuners and professional communications equipment.DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT343R package. CAUTION The device is supplied in an antistatic package. Marking code: MF. handbook, halfpage BF1100WR PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1DESCRIPTION
d 4 3 g2 g1 2 1 Top view MAM192 s,b Fig.1 Simplified outline (SOT343R) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure f = 1 MHz f = 800 MHz PARAMETER drain-source voltage CONDITIONS − − − − 24 − − − MIN. − − − − 28 2.2 25 2 TYP.
