BF1100WR Overview
Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The device is supplied in an antistatic package.
BF1100WR Key Features
- Specially designed for use at 9 to 12 V supply voltage
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1 GHz
- Superior cross-modulation performance during AGC