Datasheet Details
| Part number | BF1100WR |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 146.39 KB |
| Description | Dual-gate MOS-FET |
| Datasheet | BF1100WR_PhilipsSemiconductors.pdf |
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Overview: DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Product specification Dual-gate.
| Part number | BF1100WR |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 146.39 KB |
| Description | Dual-gate MOS-FET |
| Datasheet | BF1100WR_PhilipsSemiconductors.pdf |
|
|
|
Enhancement type field-effect transistor in a plastic microminiature SOT343R package.
The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
CAUTION The device is supplied in an antistatic package.
| Part Number | Description |
|---|---|
| BF1100 | Dual-gate MOS-FETs |
| BF1100R | Dual-gate MOS-FETs |
| BF1101 | N-channel dual-gate MOS-FETs |
| BF1101R | N-channel dual-gate MOS-FETs |
| BF1101WR | N-channel dual-gate MOS-FETs |
| BF1102 | Dual N-channel dual gate MOS-FET |
| BF1105 | N-channel dual-gate MOS-FETs |
| BF1105R | N-channel dual-gate MOS-FETs |
| BF1105WR | N-channel dual-gate MOS-FETs |
| BF1107 | N-channel single gate MOS-FETs |