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BF1100WR - Dual-gate MOS-FET

General Description

Enhancement type field-effect transistor in a plastic microminiature SOT343R package.

The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

Key Features

  • Specially designed for use at 9 to 12 V supply voltage.
  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.
  • Superior cross-modulation performance during AGC.

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Other Datasheets by NXP Semiconductors

Part Number Description
BF1100 Dual-gate MOS-FETs
BF1100R Dual-gate MOS-FETs
BF1101 N-channel dual-gate MOS-FETs
BF1101R N-channel dual-gate MOS-FETs
BF1101WR N-channel dual-gate MOS-FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FET FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS • VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package.