BF1100WR
FEATURES
- Specially designed for use at 9 to 12 V supply voltage
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1 GHz
- Superior cross-modulation performance during AGC. APPLICATIONS
- VHF and UHF applications such as television tuners and professional munications equipment. DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
Marking code: MF. handbook, halfpage
PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION d
3 g2 g1
2 1
Top view
MAM192 s,b
Fig.1 Simplified outline (SOT343R) and...
