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BF1101R

Manufacturer: NXP Semiconductors

BF1101R datasheet by NXP Semiconductors.

BF1101R datasheet preview

BF1101R Datasheet Details

Part number BF1101R
Datasheet BF1101R_PhilipsSemiconductors.pdf
File Size 128.13 KB
Manufacturer NXP Semiconductors
Description N-channel dual-gate MOS-FETs
BF1101R page 2 BF1101R page 3

BF1101R Overview

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1101R marking code: Fig.2 Simplified outline (SOT143R). 3 fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

BF1101R Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio
  • Low noise gain controlled amplifier up to 1 GHz
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization

BF1101R Applications

  • VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional munications equipment
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Part Number Description
BF1101 N-channel dual-gate MOS-FETs
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BF1102 Dual N-channel dual gate MOS-FET
BF1105 N-channel dual-gate MOS-FETs
BF1105R N-channel dual-gate MOS-FETs
BF1105WR N-channel dual-gate MOS-FETs
BF1107 N-channel single gate MOS-FETs

BF1101R Distributor

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