• Part: BF1101
  • Description: N-channel dual-gate MOS-FETs
  • Category: MOSFET
  • Manufacturer: NXP Semiconductors
  • Size: 128.13 KB
Download BF1101 Datasheet PDF
NXP Semiconductors
BF1101
FEATURES - Short channel transistor with high forward transfer admittance to input capacitance ratio - Low noise gain controlled amplifier up to 1 GHz - Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS - VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional munications equipment. handbook, 2 columns 4 BF1101; BF1101R; BF1101WR PINNING PIN 1 2 3 4 DESCRIPTION source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 BF1101R marking code: NCp. Fig.2 Simplified outline (SOT143R). 3 fpage DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. 1 Top view 2 MSB014 2 Top...