NXP Semiconductors BF1100
The transistor consists of an amplifier MOS-FET with source BF1100; BF1100R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The gate-source input must be protected against static discharge during transport or handling.| Part No. | BF1100 |
|---|---|
| Datasheet | BF1100 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Dual-gate MOS-FETs |
| Buy | Stock & Price |
FEATURES
● Specially designed for use at 9 to 12 V supply voltage● Short channel transistor with high forward transfer admittance to input capacitance ratio
● Low noise gain controlled amplifier up to 1 GHz
● Superior cross-modulation performance during AGC.
APPLICATIONS
● VHF and UHF applications such as television tuners and professional communications equipment.DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. CAUTION The device is supplied in an antistatic package. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1DESCRIPTION
handbook, halfpage d 3 d handbook, halfpage 4 3 4 g2 g1 1 Top view g2 g1 2 1 MAM125 - 1 2 MAM124 s,b Top view s,b BF1100 marking code: M56. BF1100R marking code: M57. Fig.1 Simplified outline (SOT143) and symbol. Fig.2 Simplified outline (SOT143R) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F 1995 Apr 25 drain current total power dissipation operating junct...
