BF1105
FEATURES
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1 GHz.
- Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
PINNING
PIN 1 2 3 4
DESCRIPTION source drain gate 2 gate 1
APPLICATIONS
- VHF and UHF applications with 5 V supply voltage, such as television tuners and professional munications equipment.
DESCRIPTION
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. handbook, 2 c4olumns
1 Top view
MSB014
BF1105 marking code: NEp.
Fig.1 Simplified outline (SOT143B). handbook, 2 co3lumns
2 Top view
MSB035
BF1105R marking code: NAp.
Fig.2 Simplified outline (SOT143R)....
