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BF1105WR - N-channel dual-gate MOS-FETs

General Description

source drain gate 2 gate 1 APPLICATIONS

VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communications equipment.

Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.
  • Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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Other Datasheets by NXP Semiconductors

Part Number Description
BF1105 N-channel dual-gate MOS-FETs
BF1105R N-channel dual-gate MOS-FETs
BF1100 Dual-gate MOS-FETs
BF1100R Dual-gate MOS-FETs
BF1100WR Dual-gate MOS-FET

Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997 Dec 02 NXP Semiconductors N-channel dual-gate MOS-FETs Product specification BF1105; BF1105R; BF1105WR FEATURES  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier up to 1 GHz.  Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. PINNING PIN 1 2 3 4 DESCRIPTION source drain gate 2 gate 1 APPLICATIONS  VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communications equipment.