BF1105WR Description
source drain gate 2 gate 1 APPLICATIONS VHF and UHF applications with 5 V supply voltage, such as television tuners and professional munications equipment. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges.
BF1105WR Key Features
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1 GHz
- Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization