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BF1101WR - N-channel dual-gate MOS-FETs

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NXP

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BF1101WR N-channel dual-gate MOS-FETs by NXP - Datasheet Preview — Datasheet preview – BF1101WR

Datasheet Details

Part number	BF1101WR
Manufacturer	NXP
File Size	128.13 KB
Description	N-channel dual-gate MOS-FETs
Datasheet	BF1101WR Datasheet
Additional preview pages of the BF1101WR datasheet.

BF1101WR Product details

Description

BF1101R marking code: NCp.

Simplified outline (SOT143R).

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Features

Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.
Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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Published: Mar 23, 2005 |