BF1101WR Description
source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1101R marking code: Fig.2 Simplified outline (SOT143R). 3 fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.
BF1101WR Key Features
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1 GHz
- Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization
BF1101WR Applications
- VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional munications equipment