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BF1101WR - N-channel dual-gate MOS-FETs

General Description

BF1101R marking code: NCp.

Simplified outline (SOT143R).

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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Other Datasheets by NXP Semiconductors

Part Number Description
BF1101 N-channel dual-gate MOS-FETs
BF1101R N-channel dual-gate MOS-FETs
BF1100 Dual-gate MOS-FETs
BF1100R Dual-gate MOS-FETs
BF1100WR Dual-gate MOS-FET

Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment.