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BF1101WR Datasheet PDF

NXP Semiconductors BF1101WR

The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.
Part No. BF1101WR
Datasheet BF1101WR Download
Manufacturer
NXP Semiconductors
Description N-channel dual-gate MOS-FETs
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BF1101WR datasheet page 1 preview

FEATURES

● Short channel transistor with high forward transfer admittance to input capacitance ratio
● Low noise gain controlled amplifier up to 1 GHz
● Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

APPLICATIONS

● VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment. handbook, 2 columns 4 BF1101; BF1101R; BF1101WR PINNING PIN 1 2 3 4

DESCRIPTION

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1101R marking code: NCp. Fig.2 Simplified outline (SOT143R). 3 fpage 3 4

DESCRIPTION

Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. 1 Top view 2 MSB014 2 Top view 1 MSB842 BF1101 marking code: NDp. BF1101WR marking code: NC. Fig.1 Simplified outline (SOT143B). Fig.3 Simplified outline (SOT343R). QU...
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