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BF1101WR Datasheet N-channel Dual-gate Mos-fets

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product specification N-channel dual-gate.

General Description

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1101R marking code: NCp.

Fig.2 Simplified outline (SOT143R).

3 fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

More Datasheets from NXP Semiconductors

Part Number Description
BF1101 N-channel dual-gate MOS-FETs
BF1101R N-channel dual-gate MOS-FETs
BF1100 Dual-gate MOS-FETs
BF1100R Dual-gate MOS-FETs
BF1100WR Dual-gate MOS-FET
BF1102 Dual N-channel dual gate MOS-FET
BF1105 N-channel dual-gate MOS-FETs
BF1105R N-channel dual-gate MOS-FETs
BF1105WR N-channel dual-gate MOS-FETs
BF1107 N-channel single gate MOS-FETs

BF1101WR Distributor