BF1211WR Datasheet | Philips Semiconductors

FEATURES - Short channel transistor with high forward transfer admittance to input capacitance ratio - Low noise gain controlled amplifier - Excellent low frequency noise performance - Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS - Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. PINNING PIN 1 2 3 4 DESCRIPTION source drain gate 2 gate 1 handbook, 2 c4olumns 1 Top view BF1211 marking code: LFp MSB014 Fig.1 Simplified outline (SOT143B). handbook, 2 co3lumns 4 handbook, halfpage Top view BF1211R marking code: LHp MSB035 Fig.2 Simplified outline (SOT143R). QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot yfs Cig1-ss Crss F drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure Xmod cross-modulation Tj junction temperature 2003 Dec 16 2 Top view BF1211WR marking code: MK MSB842 Fig.3 Simplified outline (SOT343R). CONDITIONS f = 1 MHz f = 400 MHz input level for k = 1% at 40 d B AGC MIN. - - -...