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BF1211WR Datasheet N-channel Dual-gate Mos-fets

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 Philips Semiconductors N-channel dual-gate MOS-FETs Product specification BF1211; BF1211R;.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Integrated diodes between gates and source protect against excessive input voltage surges.

The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier.
  • Excellent low frequency noise performance.
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

More Datasheets from Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BF1211 N-channel dual-gate MOS-FETs
BF1211R N-channel dual-gate MOS-FETs
BF1102R Dual N-channel dual gate MOS-FETs

BF1211WR Distributor