* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* gold metallization ensures excellent reliability
* internal matc.

These products are not designed for use in life support appliances, devices, or systems where malfunction of these produ.

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES:
* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* gold .

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