PBSS3540M Datasheet PNP low V transistor

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

PBSS3540M pnp low v transistor by Philips Semiconductors (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	PBSS3540M
Manufacturer	Philips Semiconductors (now NXP Semiconductors)
File Size	64.08 KB
Description	PNP low V transistor
Datasheet	PBSS3540M Datasheet

General Description

Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package.

NPN complement: PBSS2540M.

QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BOTTOM VIEW M3D883 PBSS3540M 40 V, 0.5 A PNP low VCEsat (BISS) transistor Product speciﬁcation 2003 Aug 12 Philips Semiconductors 40 V, 0.

Key Features

Low collector-emitter saturation voltage VCEsat.
High collector current capability IC and ICM.
High efficiency leading to reduced heat generation.
Reduced printed-circuit board requirements.

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