PHC21025 Datasheet | Philips Semiconductors

FEATURES - High-speed switching - No secondary breakdown - Very low on-resistance. APPLICATIONS - Motor and actuator driver - Power management - Synchronized rectification. DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. PINNING - SOT96-1 (SO8) PIN SYMBOL 1 s1 2 g1 3 s2 4 g2 5 d2 6 d2 7 d1 8 d1 DESCRIPTION source 1 gate 1 source 2 gate 2 drain 2 drain 2 drain 1 drain 1 handbook, halfpage 5 d1 d1 d2 d2 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. MAM118 s1 g1 s2 g2 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. Per channel VDS VGSO VGSth RDSon Ptot drain-source voltage (DC) N-channel P-channel source-drain diode forward voltage N-channel P-channel gate-source voltage (DC) gate-source threshold voltage N-channel P-channel drain current (DC) N-channel P-channel drain-source on-state resistance N-channel P-channel total power dissipation IS = 1.25 A IS = - 1.25 A open drain VDS = VGS; ID = 1 m A VDS = VGS; ID = - 1 m A VGS = 10 V; ID = 2.2 A VGS = - 10 V; ID...