PSMN009-100W transistor equivalent, n-channel trenchmos transistor.
* ’Trench’ technology
* Very low on-state resistance
* Fast switching
* High thermal cycling performance
* Low thermal resistance
SYMBOL
d
QUICK REF.
The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
PIN 1 2 3 tab gate drain sourc.
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PSMN0.
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