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Ping Jing

MMBT9014 Datasheet Preview

MMBT9014 Datasheet

NPN Transistor

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Features
For Switching and Amplifier Applications.
As Complementary Type of the PNP Transistor
MMBT9015 is Recommended.
MMBT9014
NPN Transistor
SOT-23
(TO-236)
Absolute Maximum Ratings
Ratings at 25ambient temperature unless otherwise specified.
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Electrical Characteristics
Ratings at 25ambient temperature unless otherwise specified.
Parameter
DC Current Gain
at VCE = 5 V, IC = 1 mA Current Gain Group
B
C
D
Collector Base Cutoff Current
at VCB = 50 V
Emitter Base Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC = 100 μA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 100 μA
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 10 mA
Base Emitter Saturation Voltage
at IC = 100 mA, IB = 5 mA
Transition Frequency
at VCE = 5 V, IC = 10 mA
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
www.pingjingsemi.com
Revision1.0 Oct-2017
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Symbol
HFE
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
FT
Cob
1.Base 2.Emitter 3.Collector
Mark: MMBT9014B--1E
MMBT9014C--1F
MMBT9014D--1G
Value
50
45
5
100
200
150
-55 to 150
Unit
V
V
V
mA
mW
Min.
Typ.
Max.
Unit
110 - 220
200 - 450
420 - 800
- - 50 nA
- - 50 nA
50 -
-V
45 -
-V
5 - -V
- - 0.25 V
- - 1V
100 -
- MHz
- - 6 pF
1/3




Ping Jing

MMBT9014 Datasheet Preview

MMBT9014 Datasheet

NPN Transistor

No Preview Available !

Electrical Characteristics Curves
MMBT9014
NPN Transistor
www.pingjingsemi.com
Revision1.0 Oct-2017
2/3


Part Number MMBT9014
Description NPN Transistor
Maker Ping Jing
Total Page 3 Pages
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