MMBT9014 - LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies

Key Features

S.
High Total Power Dissipation. (450mW).
Excellent hFE Linearity.
Complementary to UTC MMBT9015 3 1 2 SOT-23 (JEDEC TO-236).

MMBT9014 low level and low noise npn epitaxial silicon transistor by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	MMBT9014
Manufacturer	Unisonic Technologies
File Size	176.21 KB
Description	LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR
Datasheet	MMBT9014 Datasheet

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UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  FEATURES * High Total Power Dissipation. (450mW) * Excellent hFE Linearity. * Complementary to UTC MMBT9015 3 1 2 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION Ordering Number MMBT9014G-x-AE3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 C: Collector Pin Assignment 123 EBC Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-022.