F1081 transistor equivalent, rf power vdmos transistor.
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
Total Device Dissipation 350 Watts Junction to Case Thermal Res.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and other.
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold meta.
Image gallery
Download