VDMOS Datasheet | Specifications & PDF Download

(120 views)

CS830 CS830 VDMOS 1. CS830 VDMOS ，。 ： ● ● ● ● ：TO-220AB 10.7max 4.8max 1.4max φ3.84 6.9max 2. 2.1 ，Tamb= 25℃ ID VGS IAR （） RθJC

(108 views)

Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn CM2N60 * ： ： * ： ◆ ◆ ◆100% N VDMOS ◆ 、 , *

(69 views)

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. CM2N60F POWER MOSFET ◆600V N-Channel VDMOS ◆ ◆ RoHS 1． 、LED 、PC 2． ， 1 2 3． TO-220FL

(63 views)

CS630F CS630F VDMOS 1. CS630F VDMOS ，、。： ● ● ● 10.4max ● ● ：TO-220F 15.5max 4.8max 2.7max 2. 2.1 ，Tamb= 25℃ （） Ta=25℃ Tc=25℃

(58 views)

polyfet rf devices P122 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

(56 views)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

(55 views)

polyfet rf devices P121 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

(55 views)

polyfet rf devices P124 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

(54 views)

CS2N60(F) CS2N60(F) VDMOS 1. CS2N60(F) N 600V VDMOS ，、 。 ： ● ● ● ● ： CS2N60 CS2N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 4.6Ω ID 2.1A 2.

(49 views)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

(48 views)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

(47 views)

www.DataSheet4U.com »ª¾§·ÖÁ¢Æ÷¼þ CS1N60(F) CS1N60(F)ÐÍ 1.¸ÅÊöÓëÌصã CS1N60(F)ÊÇ ¹Øµç· ¾ßÓÐÈçÏÂÌص㠿ª¹ØËÙ¶Èì ̬ͨµç×èС ¿É²¢ÁªÊ¹Óà Çý¶¯¼òµ¥ ·â×°ÐÎ

(47 views)

CS2N60(F) CS2N60(F) VDMOS 1. CS2N60(F) N 600V VDMOS ，、 。 ： ● ● ● ● ： CS2N60 CS2N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 4.6Ω ID 2.1A 2.

(46 views)

(44 views)

polyfet rf devices SR401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

(43 views)

INTEGRATED CIRCUITS DATA SHEET TDA8357J Full bridge vertical deflection output circuit in LVDMOS Preliminary specification File under Integrated Circ

(42 views)

CS6N60(F) CS6N60(F) VDMOS 1. CS6N60(F) N 600V VDMOS ， 、 。 ： ● ● ● ● ： CS6N60 CS6N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 1.35Ω ID 6A 2.

(41 views)

polyfet rf devices SQ741 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

(39 views)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

(39 views)