VDMOS Datasheet | Specifications & PDF Download

INTEGRATED CIRCUITS DATA SHEET TDA8357J Full bridge vertical deflection output circuit in LVDMOS Preliminary specification File under Integrated Circ

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INTEGRATED CIRCUITS DATA SHEET TDA8359J Full bridge vertical deflection output circuit in LVDMOS Product specification Supersedes data of 13 March 20

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CS630F CS630F VDMOS 1. CS630F VDMOS ，、。： ● ● ● 10.4max ● ● ：TO-220F 15.5max 4.8max 2.7max 2. 2.1 ，Tamb= 25℃ （） Ta=25℃ Tc=25℃

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn CM2N60 * ： ： * ： ◆ ◆ ◆100% N VDMOS ◆ 、 , *

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CS6N60(F) CS6N60(F) VDMOS 1. CS6N60(F) N 600V VDMOS ， 、 。 ： ● ● ● ● ： CS6N60 CS6N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 1.35Ω ID 6A 2.

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CS6N60(F) CS6N60(F) VDMOS 1. CS6N60(F) N 600V VDMOS ， 、 。 ： ● ● ● ● ： CS6N60 CS6N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 1.35Ω ID 6A 2.

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CS830 CS830 VDMOS 1. CS830 VDMOS ，。 ： ● ● ● ● ：TO-220AB 10.7max 4.8max 1.4max φ3.84 6.9max 2. 2.1 ，Tamb= 25℃ ID VGS IAR （） RθJC

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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polyfet rf devices P122 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn CM2N60C ： * ： ： * ： ◆ ◆ ◆100% N VDMOS ◆ 、 ,

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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polyfet rf devices P121 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn CM4D5N50 N- VDMOS * ： ◆ 、 * ： ◆ , ◆ ◆100% * ： ◆

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn CM7N60F N VDMOS * ： ◆ 、 * ： ◆ , ◆ ◆100% * ： ◆

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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www.DataSheet4U.com CS4N60(F) CS4N60(F) VDMOS 1. CS4N60(F) N 600V VDMOS ，、 。 ： ● ● ● ● ： CS4N60 CS4N60F TO-220 TO-220F VDSS 600V RDS(ON)M

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

(9 views)