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SP202 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices SP202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.F1001 - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .F1410 - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .P122 - PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices P122 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili.CS630F - VDMOS transistor
CS630F CS630F VDMOS 1. CS630F VDMOS ,、。: ● ● ● 10.4max ● ● :TO-220F 15.5max 4.8max 2.7max 2. 2.1 ,Tamb= 25℃ () Ta=25℃ Tc=25℃ .F1001C - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .F1003 - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .F1107 - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .F1108 - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .F1220 - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .F1415 - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .F1510 - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .F2049 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .TDA8359J - Full bridge vertical deflection output circuit in LVDMOS
INTEGRATED CIRCUITS DATA SHEET TDA8359J Full bridge vertical deflection output circuit in LVDMOS Product specification Supersedes data of 13 March 20.S8202 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.SP701 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices SP701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.SP702 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices SP702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.CS830 - VDMOS Transistors
CS830 CS830 VDMOS 1. CS830 VDMOS ,。 : ● ● ● ● :TO-220AB 10.7max 4.8max 1.4max φ3.84 6.9max 2. 2.1 ,Tamb= 25℃ ID VGS IAR () RθJC.CM2N60 - N-Channel VDMOS
Shenzhen Jingdao Electronic Co.,Ltd. TEL:0755-29799516 FAX:0755-29799515 Http://www.jdsemi.cn CM2N60 * : : * : ◆ ◆ ◆100% N VDMOS ◆ 、 , *.F1002 - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .