Datasheet4U Logo Datasheet4U.com

P281 Datasheet - Polyfet RF Devices

P281 PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

P281 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM P281 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 2.5 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM

P281_PolyfetRFDevices.pdf

Preview of P281 PDF
P281 Datasheet Preview Page 2

Datasheet Details

Part number:

P281

Manufacturer:

Polyfet RF Devices

File Size:

38.41 KB

Description:

Patented gold metallized silicon gate enhancement mode rf power vdmos transistor.

📁 Related Datasheet

P2803BMG N-Channel MOSFET (UNIKC)

P2803HVG N-Channel MOSFET (UNIKC)

P2803NVG N&P-Channel MOSFET (UNIKC)

P2803NVG N-&P-Channel MOSFET (NIKO-SEM)

P2804BDG N-Channel MOSFET (UNIKC)

P2804BDG N-Channel MOSFET (NIKO-SEM)

P2804BI MOSFET (UNIKC)

P2804BVG N-Channel MOSFET (UNIKC)

TAGS

P281 P281 PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

P281 Distributor