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P281 - PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

P281 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

P281 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM P281 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 2.5 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM

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Datasheet Details

Part number
P281
Manufacturer
Polyfet RF Devices
File Size
38.41 KB
Datasheet
P281_PolyfetRFDevices.pdf
Description
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices
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