P2803HVG Datasheet - UNIKC

P2803HVG N-Channel MOSFET

P2803HVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 27.5mΩ @VGS = 10V ID 6.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TA = 25 °C TA = 70 °C ID IDM 6.5 5 30 Avalanche Current IAS 20 Avalanche Energy L = 0.1mH EAS 20 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.3 Ope.

P2803HVG Datasheet (299.89 KB)