P2804BDG - N-Channel MOSFET
P2804BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 28mΩ @VGS = 10V ID 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 25 16 75 Avalanche Current IAS 26 Avalanche Energy L = 0.1mH EAS 34 Power Dissipation TC = 25 °C TC = 100 °C PD 31 12.5 Operating Junction & Storage Tempera
