P2804ND5G N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28mΩ @VGS =10V -40V 48mΩ @VGS = -10V ID 21A -16A Channel N P TO-252-5 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 40 VDS P -40 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current N 21 TC = 25 °C P -16 ID N 13 TC = 100°C P -10 Pulsed Drain Current1 N 50 IDM P -50 Avalanche Current N 26 IAS P -26 .