P2804HVG Datasheet - UNIKC

P2804HVG Dual N-Channel MOSFET

P2804HVG Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 28mΩ @VGS = 10V ID 7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 7 6 40 Power Dissipation TA = 25 °C TA= 70°C PD 2 1.28 Junction & Storage Temperature Range Lead Temperature (1/16” from case for 1.

P2804HVG Datasheet (464.74 KB)