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A1SHB - P-Channel Enhancement Mode Power MOSFET
MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char.A19T - P-Channel Enhancement Mode Power MOSFET
RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge .NCE4688 - N & P-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog.NCE8290 - N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com Pb Free Product NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology .20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.A06N03N - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 25V D RDSON (MAX.) 6mΩ ID 80A G UIS, Rg 100%.HY5608A - N-Channel Enhancement Mode MOSFET
HY5608W/A N-Channel Enhancement Mode MOSFET Features • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.HY5012W - N-Channel Enhancement Mode MOSFET
HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.NCE8580 - N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com Pb Free Product NCE8580 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8580 uses advanced trench technology .9435A - -30V P-Channel Enhancement Mode MOSFET
SHENZHEN HUAXUANYANG ELECTRONICS CO.,LTD 9435A -30V P-Channel Enhancement Mode MOSFET General Description: The 9435A is the single P-Channel logic .FBM80N70P - N-Channel Enhancement Mode MOSFET
FBM80N70P/B FBM@ N-Channel Enhancement Mode MOSFET Features • 70V/80A RDS(ON) = 6.0 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugg.NCE82H140 - N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com Pb Free Product NCE82H140 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140 uses advanced trench technol.HM4409 - P-Channel Enhancement Mode Power MOSFET
+0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology to provide excellent RDS(ON), This device .2N7002 - N-Channel Enhancement Mode Power MOSFET
2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230.NCE40H12 - N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com Pb Free Product NCE40H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technolog.HY5608W - N-Channel Enhancement Mode MOSFET
HY5608W/A N-Channel Enhancement Mode MOSFET Features • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.A6SHB - N-Channel Enhancement Mode Power MOSFET
WTM2306 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is.EMBA5N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 150mΩ ID 10A G UIS, Rg.