Part number:
P121
Manufacturer:
Polyfet RF Devices
File Size:
32.87 KB
Description:
Patented gold metallized silicon gate enhancement mode rf power vdmos transistor.
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 1.0 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE
P121
Polyfet RF Devices
32.87 KB
Patented gold metallized silicon gate enhancement mode rf power vdmos transistor.
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