P121 Datasheet, Transistor, Polyfet RF Devices

P121 Features

• Transistor low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER

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Part number:

P121

Manufacturer:

Polyfet RF Devices

File Size:

32.87kb

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📄 Datasheet

Description:

Patented gold metallized silicon gate enhancement mode rf power vdmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Pa

P121 Application

• Applications Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" pro

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