P121 Datasheet - Polyfet RF Devices

P121, PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices P121 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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Datasheet Details

Part number:

P121

Manufacturer:

Polyfet RF Devices

File Size:

32.87 KB

Description:

PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 1.0 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE

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